Features of Low-Temperature GaAs Formation for Epitaxy Device Structures
نویسندگان
چکیده
منابع مشابه
Low-temperature formation of metal/molecular-beam epitaxy
We report soft x-ray photoemission studies of metal/molecular-beam epitaxy (MBE)GaAs(lOO) interfaces formed at low temperature. Our results indicate that rectifying barrier heights are proportional to the metal work function in accordance with Schottky's original description of metal-semiconductor contacts. These results confirm the predictions of a selfconsistent model of metal-semiconductor i...
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The results of an analytic calculation of the surface current and selected mound angle as a function of the Ehrlich-Schwoebel step barrier EB and substrate temperature T are presented for a model of epitaxial growth on bcc~100! and fcc~100! surfaces. Depending on the sign of EB and the magnitude of the prefactor for diffusion over a step, various scenarios are possible, including the existence ...
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ژورنال
عنوان ژورنال: Journal of Nano-and electronic Physics
سال: 2022
ISSN: ['2306-4277', '2077-6772']
DOI: https://doi.org/10.21272/jnep.14(2).02016